Physical mechanism of buffer-related lag and current collapse in GaN-based FETs and their reduction by introducing a field plate

Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio

研究成果: Conference contribution

8 被引用数 (Scopus)

抄録

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs and GaN MESFETs is performed, considering a deep donor and a deep acceptor in the semi-insulating GaN buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of a field plate affects buffer-related drain lag, gate lag and current collapse. It is shown that in both FETs, the drain lag is reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and trapping effects are reduced. It is also shown that the buffer-related current collapse and gate lag are reduced in the field-plate structures. The dependence on SiN passivation layer thickness under the field plate is also studied, suggesting that there is an optimum thickness of the SiN layer to minimize buffer-related current collapse and drain lag in GaN HEMTs and MESFETs.

本文言語English
ホスト出版物のタイトル2009 IEEE International Reliability Physics Symposium, IRPS 2009
ページ722-726
ページ数5
DOI
出版ステータスPublished - 2009 11 12
イベント2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
継続期間: 2009 4 262009 4 30

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
ISSN(印刷版)1541-7026

Conference

Conference2009 IEEE International Reliability Physics Symposium, IRPS 2009
国/地域Canada
CityMontreal, QC
Period09/4/2609/4/30

ASJC Scopus subject areas

  • 工学(全般)

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