Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.
|ジャーナル||Annual Proceedings - Reliability Physics (Symposium)|
|出版ステータス||Published - 1995|
|イベント||Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA|
継続期間: 1995 4月 4 → 1995 4月 6
ASJC Scopus subject areas