Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs

K. Horio, K. Usami, K. Satoh

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.

本文言語English
ページ(範囲)212-216
ページ数5
ジャーナルAnnual Proceedings - Reliability Physics (Symposium)
DOI
出版ステータスPublished - 1995
イベントProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
継続期間: 1995 4 41995 4 6

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 安全性、リスク、信頼性、品質管理

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