Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs

Y. Mitani, A. Wakabayashi, Kazushige Horio

研究成果: Conference contribution

抄録

Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.

本文言語English
ホスト出版物のタイトルIEEE International Reliability Physics Symposium Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ189-193
ページ数5
2002-January
ISBN(印刷版)0780373529
DOI
出版ステータスPublished - 2002
イベント40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States
継続期間: 2002 4 72002 4 11

Other

Other40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
国/地域United States
CityDallas
Period02/4/702/4/11

ASJC Scopus subject areas

  • 工学(全般)

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