Physical properties of bi₄ti₃o₁₂films grown on si(100) wafers

Bismuth titanate (Bi₄Ti₃O₁₂) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi₂TiO₅ ceramic. C-axis-oriented Bi₄Ti₃O₁₂ films were grown on Si(100) at a low substrate temperature of 550ŶC. However, thesefilms did not exhibit ferroelectricity, and the dielectricconstant ॉ_rand dissipation factor tan ै were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21ŠkV/cm.