Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-axis-oriented Bi4Ti3O12 films were grown on Si(100) at a low substrate temperature of 550ŶC. However, thesefilms did not exhibit ferroelectricity, and the dielectricconstant ॉrand dissipation factor tan ै were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21ŠkV/cm.
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