TY - JOUR
T1 - Physical properties of bi4ti3o12films grown on si(100) wafers
AU - Yamaguchi, Masaki
AU - Nagatomo, Takao
AU - Omoto, Osamu
PY - 1995/9
Y1 - 1995/9
N2 - Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-axis-oriented Bi4Ti3O12 films were grown on Si(100) at a low substrate temperature of 550ŶC. However, thesefilms did not exhibit ferroelectricity, and the dielectricconstant ॉrand dissipation factor tan ै were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21ŠkV/cm.
AB - Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-axis-oriented Bi4Ti3O12 films were grown on Si(100) at a low substrate temperature of 550ŶC. However, thesefilms did not exhibit ferroelectricity, and the dielectricconstant ॉrand dissipation factor tan ै were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21ŠkV/cm.
KW - BiTiO
KW - C-axis orientation
KW - Rf planar magnetron sputtering
KW - Thickness dependance
KW - Thin films
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U2 - 10.1143/JJAP.34.5116
DO - 10.1143/JJAP.34.5116
M3 - Article
AN - SCOPUS:0029371547
VL - 34
SP - 5116
EP - 5119
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9
ER -