Physical properties of bi4ti3o12films grown on si(100) wafers

Masaki Yamaguchi, Takao Nagatomo, Osamu Omoto

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-axis-oriented Bi4Ti3O12 films were grown on Si(100) at a low substrate temperature of 550ŶC. However, thesefilms did not exhibit ferroelectricity, and the dielectricconstant ॉrand dissipation factor tan ै were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21ŠkV/cm.

本文言語English
ページ(範囲)5116-5119
ページ数4
ジャーナルJapanese Journal of Applied Physics
34
9
DOI
出版ステータスPublished - 1995 9月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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