Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs

H. Onodera, A. Nakajima, K. Horio

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of gate field plate is effective in reducing buffer-related lag and current collapse when the acceptor density in the buffer layer is high. On the other hand, the introduction of backside electrode is effective in reducing drain lag and current collapse when the acceptor density in the buffer layer is relatively low, because the fixed potential at the backside electrode reduces electron injection into the buffer layer and the resulting trapping effects.

本文言語English
ホスト出版物のタイトルEuropean Microwave Week 2011
ホスト出版物のサブタイトル"Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
ページ45-48
ページ数4
出版ステータスPublished - 2011 12 1
イベント14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - Manchester, United Kingdom
継続期間: 2011 10 102011 10 11

出版物シリーズ

名前European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011

Conference

Conference14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
CountryUnited Kingdom
CityManchester
Period11/10/1011/10/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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