Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs

Hiraku Onodera, Kazushige Horio

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-To-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and it can decrease with increasing the field-plate length. On the other hand, when the acceptor density is relatively low, the buffer leakage current becomes very large and it can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

本文言語English
ホスト出版物のタイトルEuropean Microwave Week 2012
ホスト出版物のサブタイトル"Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012
ページ401-404
ページ数4
出版ステータスPublished - 2012 12 1
イベント7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam, Netherlands
継続期間: 2012 10 292012 10 30

出版物シリーズ

名前European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012

Conference

Conference7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012
国/地域Netherlands
CityAmsterdam
Period12/10/2912/10/30

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ

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