Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs

T. Tanaka, K. Itagaki, A. Nakajima, Kazushige Horio

研究成果: Conference contribution

1 引用 (Scopus)

抄録

Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.

元の言語English
ホスト出版物のタイトルEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
ページ164-167
ページ数4
出版物ステータスPublished - 2009
イベントEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome
継続期間: 2009 9 282009 10 2

Other

OtherEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Rome
期間09/9/2809/10/2

Fingerprint

Field effect transistors
Surface states
Physics
Substrates

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Tanaka, T., Itagaki, K., Nakajima, A., & Horio, K. (2009). Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. : European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 (pp. 164-167). [5296293]

Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. / Tanaka, T.; Itagaki, K.; Nakajima, A.; Horio, Kazushige.

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 164-167 5296293.

研究成果: Conference contribution

Tanaka, T, Itagaki, K, Nakajima, A & Horio, K 2009, Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. : European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009., 5296293, pp. 164-167, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, Rome, 09/9/28.
Tanaka T, Itagaki K, Nakajima A, Horio K. Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. : European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 164-167. 5296293
Tanaka, T. ; Itagaki, K. ; Nakajima, A. ; Horio, Kazushige. / Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. pp. 164-167
@inproceedings{c5feefd589ba49dcabfdfe9509390cfd,
title = "Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs",
abstract = "Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.",
author = "T. Tanaka and K. Itagaki and A. Nakajima and Kazushige Horio",
year = "2009",
language = "English",
isbn = "9782874870125",
pages = "164--167",
booktitle = "European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009",

}

TY - GEN

T1 - Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs

AU - Tanaka, T.

AU - Itagaki, K.

AU - Nakajima, A.

AU - Horio, Kazushige

PY - 2009

Y1 - 2009

N2 - Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.

AB - Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.

UR - http://www.scopus.com/inward/record.url?scp=72449192156&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72449192156&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:72449192156

SN - 9782874870125

SP - 164

EP - 167

BT - European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

ER -