Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs

T. Tanaka, K. Itagaki, A. Nakajima, K. Horio

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.

本文言語English
ホスト出版物のタイトルEuropean Microwave Week 2009, EuMW 2009
ホスト出版物のサブタイトルScience, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
ページ164-167
ページ数4
出版ステータスPublished - 2009
イベントEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy
継続期間: 2009 9 282009 10 2

出版物シリーズ

名前European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Conference

ConferenceEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
国/地域Italy
CityRome
Period09/9/2809/10/2

ASJC Scopus subject areas

  • コンピュータ ネットワークおよび通信
  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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