Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire

Guolin Yu, Hiroyasu Ishikawa, Takashi Egawa, Tetsuo Soga, Junji Watanabe, Takashi Jimbo, Masayoshi Umeno

研究成果: Article査読

43 被引用数 (Scopus)

抄録

The refractive indices n (E⊥c) and n (E ∥ c) of the hexagonal GaN on sapphire substrates have been determined in the transparent region using the polarized reflection measurements. It is found that the difference in the refractive indices for E⊥c and E ∥ c is below 3% over the entire wavelength range measured, and ∈ the high-frequency dielectric constant, is 5.14 for E⊥c and 5.31 for E ∥ c. Ellipsometry angles, Δ and ψ, have been calculated using the results of n, n and the thickness of the film, and an excellent agreement has been obtained between the calculated results and ellipsometric measured data.

本文言語English
ページ(範囲)L1029-L1031
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
36
8 PART A
出版ステータスPublished - 1997 8 1
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

フィンガープリント 「Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル