The refractive indices n⊥ (E⊥c) and n∥ (E ∥ c) of the hexagonal GaN on sapphire substrates have been determined in the transparent region using the polarized reflection measurements. It is found that the difference in the refractive indices for E⊥c and E ∥ c is below 3% over the entire wavelength range measured, and ∈∞ the high-frequency dielectric constant, is 5.14 for E⊥c and 5.31 for E ∥ c. Ellipsometry angles, Δ and ψ, have been calculated using the results of n⊥, n∥ and the thickness of the film, and an excellent agreement has been obtained between the calculated results and ellipsometric measured data.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|号||8 PART A|
|出版ステータス||Published - 1997 8月 1|
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