Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Kazuyoshi Ueno; Hikaru Hida; Yumi Ogawa; Yasutoshi Tsukada; Tadatoshi Nozaki

doi:10.1109/IEDM.1988.32943

Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Kazuyoshi Ueno, Hikaru Hida, Yumi Ogawa, Yasutoshi Tsukada, Tadatoshi Nozaki

研究成果 › 査読

2 被引用数 (Scopus)

抄録

Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (V_t) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSI_x-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (V_t = -0.65 V).

本文言語	English
ページ（範囲）	846-849
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting
DOI	https://doi.org/10.1109/IEDM.1988.32943
出版ステータス	Published - 1988 12月 1
イベント	Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA 継続期間: 1988 12月 11 → 1988 12月 14

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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10.1109/IEDM.1988.32943

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引用スタイル

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title = "Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates",

abstract = "Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (Vt) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSIx-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (Vt = -0.65 V).",

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AU - Ueno, Kazuyoshi

AU - Hida, Hikaru

AU - Ogawa, Yumi

AU - Tsukada, Yasutoshi

AU - Nozaki, Tadatoshi

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (Vt) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSIx-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (Vt = -0.65 V).

AB - Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (Vt) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSIx-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (Vt = -0.65 V).

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Technical Digest - International Electron Devices Meeting 1988

Y2 - 11 December 1988 through 14 December 1988

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Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

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