Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Kazuyoshi Ueno, Hikaru Hida, Yumi Ogawa, Yasutoshi Tsukada, Tadatoshi Nozaki

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (Vt) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSIx-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (Vt = -0.65 V).

本文言語English
ページ(範囲)846-849
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
DOI
出版ステータスPublished - 1988 12 1
イベントTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
継続期間: 1988 12 111988 12 14

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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