Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Kazuyoshi Ueno, Hikaru Hida, Yumi Ogawa, Yasutoshi Tsukada, Tadatoshi Nozaki

研究成果: Conference contribution

2 引用 (Scopus)

抄録

Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (V t) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSI x-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (V t = -0.65 V).

元の言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting
編集者 Anon
ページ846-849
ページ数4
DOI
出版物ステータスPublished - 1988 12
外部発表Yes
イベントTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
継続期間: 1988 12 111988 12 14

Other

OtherTechnical Digest - International Electron Devices Meeting 1988
San Francisco, CA, USA
期間88/12/1188/12/14

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Field effect transistors
Transconductance
Substrates
Threshold voltage
Crystal orientation
Tensors
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Ueno, K., Hida, H., Ogawa, Y., Tsukada, Y., & Nozaki, T. (1988). Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. : Anon (版), Technical Digest - International Electron Devices Meeting (pp. 846-849) https://doi.org/10.1109/IEDM.1988.32943

Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. / Ueno, Kazuyoshi; Hida, Hikaru; Ogawa, Yumi; Tsukada, Yasutoshi; Nozaki, Tadatoshi.

Technical Digest - International Electron Devices Meeting. 版 / Anon. 1988. p. 846-849.

研究成果: Conference contribution

Ueno, K, Hida, H, Ogawa, Y, Tsukada, Y & Nozaki, T 1988, Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. : Anon (版), Technical Digest - International Electron Devices Meeting. pp. 846-849, Technical Digest - International Electron Devices Meeting 1988, San Francisco, CA, USA, 88/12/11. https://doi.org/10.1109/IEDM.1988.32943
Ueno K, Hida H, Ogawa Y, Tsukada Y, Nozaki T. Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. : Anon, 編集者, Technical Digest - International Electron Devices Meeting. 1988. p. 846-849 https://doi.org/10.1109/IEDM.1988.32943
Ueno, Kazuyoshi ; Hida, Hikaru ; Ogawa, Yumi ; Tsukada, Yasutoshi ; Nozaki, Tadatoshi. / Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. Technical Digest - International Electron Devices Meeting. 編集者 / Anon. 1988. pp. 846-849
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