Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (Vt) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSIx-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (Vt = -0.65 V).
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 1988 12 1|
|イベント||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
継続期間: 1988 12 11 → 1988 12 14
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