Preparation and Characterization of a New Ge-Sb-Te Thin Film

Tomohiro Suzuki, Takahiro Ishizaki, Satoru Mori, Akio Fuwa

研究成果: Article

抜粋

Ge10Sb67.5Te22.5 thin films were prepared by RF magnetron sputtering from a single high purity Ge10Sb 67.5Te22.5 target under the following condition: RF power: 30 W, Ar pressure: 1.067 Pa, Ar flow: 9 ccm, substrate temperature: room temperature (water cooling), distance between target and substrate: 7 cm, and sputtering time: 10∼40 min. Although the as-deposited film was amorphous, annealing for 30 min at 573 K allowed it to be crystallized. The crystallization temperature and the activation energy of Ge10Sb 67.5Te22.5 thin film were around 463 K and 2.50 eV, respectively, while those of Ge2Sb2Te5 thin film, prepared under the same conditions as stated above, were around 408 K and 2.04 eV, respectively. The difference of optical constants between crystalline and amorphous phases of Ge10Sb67.5Te22.5 and Ge2Sb2Te5 thin films were -0.9 + i0.93 and -0.77 + i0.67, respectively, in a blue laser area, i.e., wavelength 405 nm.

元の言語English
ページ(範囲)90-93
ページ数4
ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
68
発行部数2
DOI
出版物ステータスPublished - 2004 2

    フィンガープリント

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

これを引用