Ferroelectric bismuth titanate (Bi4Ti3O12) thin films were prepared directly on (100) silicon substrate by rf planar magnetron sputtering using a Bi2TiO5 ceramic target. Highly c-axis-oriented films were obtained at a high deposition rate of about 17 nm/min. The deposited thin films, consisting of plate-like grains about 2 μm in diameter, were grown uniformly parallel to the substrate surface. The remanent polarization (Pr) and the coercive field (Ec) of this film at 50 Hz were estimated to be 0.8 μC/cm2 and 20kV/cm, respectively.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|号||9 SUPPL. B|
|出版ステータス||Published - 1996 9月|
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