Preparation and properties of tantalum oxide films by sol-gel method

Tomoji Ohishi, Tetsuo Nakazawa, Akira Katou

研究成果: Article

4 引用 (Scopus)

抄録

The preparation of tantalum oxide thin film by the sol-gel method is discussed. The conditions of the film growth are investigated carefully to avoid pinholes and cracks. In particular, the effect of hydrochloric acid added to the sol solution is clarified. It was found by TEM observation that the rapid degradation of the breakdown voltage was due to pinholes created during crystallization process.

元の言語English
ページ(範囲)50-59
ページ数10
ジャーナルElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
76
発行部数9
出版物ステータスPublished - 1993 9
外部発表Yes

Fingerprint

Tantalum oxides
tantalum oxides
pinholes
Film growth
Hydrochloric acid
Sols
Electric breakdown
Sol-gel process
Oxide films
oxide films
Crystallization
gels
Transmission electron microscopy
Cracks
Degradation
Thin films
preparation
hydrochloric acid
electrical faults
cracks

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

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