Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method

Mikihiro Nomura, Kenta Ono, Suraj Gopalakrishnan, Takashi Sugawara, Shin Ichi Nakao

研究成果: Article査読

121 被引用数 (Scopus)

抄録

A stable silica membrane having excellent H2/N2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O2 as reactants at 873 K. TMOS and O2 were provided in the opposing geometry of the substrates, and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H2 was ca. 20 kJ mol-1 through the membrane. H2 permeance at 873 K permeation test was 1.5 ×10-7 mol m-2 s -1 Pa-1. H2/N2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K).

本文言語English
ページ(範囲)151-158
ページ数8
ジャーナルJournal of Membrane Science
251
1-2
DOI
出版ステータスPublished - 2005 4 1
外部発表はい

ASJC Scopus subject areas

  • 生化学
  • 材料科学(全般)
  • 物理化学および理論化学
  • ろ過および分離

フィンガープリント

「Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル