Bismuth titanate (Bi4Ti3O12) thin films were fabricated on bismuth silicate (Bi2SiO5)-coated silicon substrates by alternately applying metal-organic decomposition (MOD). In this method of alternately applying MOD, bismuth and titanium precursor layers are alternately spin-coated. Therefore, a fundamental network was assumed to be constructed before high-temperature crystallization. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with a c-axis-dominant orientation. The surface morphological and electrical properties were greatly dependent on the order of bismuth and titanium precursor layers. Thus, we assumed that the thin film properties were improved by alternately applying MOD.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2003 9月|
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