Preparation of bismuth titanate thin films by alternately supplying metal-organic-decomposition method

M. Yamaguchi, Y. Masuda

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by alternately supplying metal-organic decomposition (MOD) method. The alternately supplying MOD method was spin coated turn about bismuth and titanium precursor layers. Therefore, the fundamental formation was construction before high temperature crystallized process. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation with thin precursor film, Furthermore, the crystallinity and the surface morphology of the film was greatly dependence on the order of precursor layers. The metal-insulator-semiconductor (MIS) structures exhibit relatively superior dielectric characteristics. Then, we think that the Bi4Ti3O12 thin film properties were improved by using alternately supplying metal-organic decomposition process.

本文言語English
ページ(範囲)S1408-S1411
ジャーナルJournal of the Korean Physical Society
42
SUPPL.
出版ステータスPublished - 2003 4

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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