Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by alternately supplying metal-organic decomposition (MOD) method. The alternately supplying MOD method was spin coated turn about bismuth and titanium precursor layers. Therefore, the fundamental formation was construction before high temperature crystallized process. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation with thin precursor film, Furthermore, the crystallinity and the surface morphology of the film was greatly dependence on the order of precursor layers. The metal-insulator-semiconductor (MIS) structures exhibit relatively superior dielectric characteristics. Then, we think that the Bi4Ti3O12 thin film properties were improved by using alternately supplying metal-organic decomposition process.
|ジャーナル||Journal of the Korean Physical Society|
|出版ステータス||Published - 2003 4|
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