Bismuth titanate (Bi4Ti3O12) thin films were fabricated on a bismuth silicate (Bi2SiO5)-coated silicon substrate by the metalorganic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi4Ti3O12 thin films with c-axis-dominant orientation. However, the fabricated films have a high leakage current density of approximately 104 A·cm-2. It is considered that this is mainly caused by the surface roughness due to the growth of plate-like grains. The growth of the Bi4Ti3O12 thin films using the MOD method is influenced by the substrate. Therefore, it is regarded that the addition of Bi2SiO5 thin film improves the crystallinity of Bi4Ti3O12 thin films.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2001 9月|
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