Preparation of Bi4Ti3O12/Bi2SiO5 /Si structures derived by metal organic decomposition technique

Masaki Yamaguchi, Takao Nagatomo, Yoichiro Masuda

研究成果: Article

9 引用 (Scopus)

抜粋

Bismuth titanate (Bi4Ti3O12) thin films were fabricated on a bismuth silicate (Bi2SiO5)-coated silicon substrate by the metalorganic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi4Ti3O12 thin films with c-axis-dominant orientation. However, the fabricated films have a high leakage current density of approximately 104 A·cm-2. It is considered that this is mainly caused by the surface roughness due to the growth of plate-like grains. The growth of the Bi4Ti3O12 thin films using the MOD method is influenced by the substrate. Therefore, it is regarded that the addition of Bi2SiO5 thin film improves the crystallinity of Bi4Ti3O12 thin films.

元の言語English
ページ(範囲)5559-5563
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
発行部数9 B
DOI
出版物ステータスPublished - 2001 9

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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