CVD (chemical vapor deposition) procedures were investigated by using a counter diffusion CVD method. The effects of silica precursors on the hydrogen permeation properties of the silica membranes were discussed. 5 types of silica alkoxides (tetramethylorthosilicate (TMOS), methyltrimethoxysilane (MTMOS), propyltrimethoxysilane (PTMOS), dimethyldimethoxysilane (DMDMOS), and trimethylmethoxysilane (TMMOS)) were employed as the silica precursors; they have different numbers of methyl groups. Hydrogen permeance through the DMDMOS membrane prepared at 500 °C was 9.0 × 10-7 mol m -2 s-1 Pa-1, and H2/N2 selectivity was 920. Activation energy of H2 permeation through the silica membrane prepared from TMOS was 10.5 kJ mol-1 that was the maximum among the 5 types of the silica precursor. This indicates dense silica layer can be obtained from TMOS. Thus, TMOS was employed for the further Li 4SiO4 preparation. High temperature CO2 permselective membranes were successfully prepared by using Li 4SiO4 as a CO2 selective layer. Pinholes of the Li4SiO4 layer was filled by the CVD post treatment at 600 °C. CO2/N2 permselectivity was 1.2 at the 600 °C permeation test. The CO2 permeance ratio is higher than the Knudsen diffusion difference. Thus, this selectivity was explained by the CO2 selective adsorption on the Li4SiO4 layer.
|出版ステータス||Published - 2013|
|イベント||11th International Conference on Greenhouse Gas Control Technologies, GHGT 2012 - Kyoto, Japan|
継続期間: 2012 11 18 → 2012 11 22
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