Properties of Bi4Ti3O12 thin films grown at low temperatures

Masaki Yamaguchi, Takao Nagatomo, Osamu Omoto

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Bismuth titanate (Bi4Ti3O12) thin films have been deposited on a (100) silicon substrate with a buffer layer, using a rf planer magnetron sputtering technique. The buffer layer was formed by the heat treatment of an amorphous layer at 550°C, and exhibits a pyrochlore phase with a smooth surface. The amorphous layer consists of Bi, Ti and O atoms, which are the elements of the ferroelectric Bi4Ti3O12 thin film. Ferroelectric Bi4Ti3O12 thin films were deposited on the buffer layer at a low substrate temperature of 500°C. The Bi4Ti3O12 thin films have a dense and small grain structure. A D-E hysteresis characteristic has been observed at room temperature. The apparent remanent polarization and the apparent coercive field of this film at the measurement frequency of 50 Hz were estimated to be 2.4 μC/cm2 and 2.3 kV/cm, respectively.

本文言語English
ページ(範囲)5885-5888
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
9 SUPPL. B
DOI
出版ステータスPublished - 1997 9

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Properties of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films grown at low temperatures」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル