Properties of liquid-phase-deposited SiO₂ films for interlayer dielectrics in ultralarge-scale integrated circuit multilevel interconnections

Physics & Astronomy

• integrated circuits 100%
• interlayers 96%
• liquid phases 89%
• oligomers 26%
• micrometers 13%
• vapor deposition 11%
• wiring 9%
• hydrofluoric acid 9%
• annealing 9%
• shrinkage 7%
• infrared spectra 7%
• polymerization 7%
• aqueous solutions 6%
• residual stress 6%
• high current 6%
• acids 6%
• absorptivity 6%
• leakage 6%
• breakdown 5%
• adsorption 5%
• etching 5%
• electrical properties 5%
• refractivity 5%
• permittivity 5%
• aluminum 5%
• profiles 4%

Engineering & Materials Science

• Integrated circuits 97%
• Liquids 70%
• Oligomers 38%
• Dielectric films 25%
• Chemical vapor deposition 20%
• Annealing 17%
• Hydrofluoric acid 13%
• Full width at half maximum 12%
• Refractive index 11%
• Polysilicon 10%
• Electric breakdown 9%
• Polymerization 9%
• Electric wiring 9%
• Etching 9%
• Leakage currents 9%
• Electric properties 9%
• Permittivity 8%
• Fourier transforms 8%
• Adsorption 8%
• Acids 8%
• Residual stresses 7%
• Infrared radiation 7%
• Aluminum 6%
• Substrates 6%
• Chemical analysis 5%

Chemical Compounds

• Dielectric Material 92%
• Liquid Film 50%
• Liquid 38%
• Dielectric Film 25%
• Oligomer 21%
• Deposition Technique 19%
• Chemical Vapour Deposition 15%
• Annealing 13%
• Residual Stress 11%
• Leakage Current 11%
• Catalysis 11%
• Absorption Coefficient 9%
• Fourier Transform Infrared Spectrum 9%
• Refractive Index 8%
• Surface 8%
• Dielectric Constant 8%
• Etching 7%
• Electrical Property 7%
• Acid 6%
• Strength 5%
• Polymerization Reaction 5%
• Aqueous Solution 4%
• Adsorption 4%