Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

Kazunori Kurishima; Toshihide Nabatame; Takio Kizu; Nobuhiko Mitoma; Kazuhito Tsukagoshi; Tomomi Sawada; Akihiko Ohi; Ippei Yamamoto; Tomoji Ohishi; Toyohiro Chikyow; Atsushi Ogura

doi:10.1149/07510.0149ecst

Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

Kazunori Kurishima, Toshihide Nabatame, Takio Kizu, Nobuhiko Mitoma, Kazuhito Tsukagoshi, Tomomi Sawada, Akihiko Ohi, Ippei Yamamoto, Tomoji Ohishi, Toyohiro Chikyow, Atsushi Ogura

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

We studied characteristic of carbon-doped indium-tungsten-oxide (In_1-xW_xOC) thin film transistors (TFTs) with SiO₂ gate insulator.The In_1-xW_xOC films, were fabricated by co-sputtering method with WC and In₂O₃ targets, had an amorphous structure and maintained W-C bond even after annealing at 300°C. The saturation field-effect mobility, on/off current ratio and subthreshold swing values of the In_0.96W_0.04OC TFT were 5.6 cm²/Vs, 1.0 × 10⁹ and 0.52 V/decade, respectively. To effect of doped carbon in In_1-xW_xOC channel on reliability of transistor properties, we compared the turn on voltage shift (ΔV_on) behavior between the In_0.96W_0.04OC and In_0.98W_0.02O TFTs under positive gate bias stress (PBS) and negative gate bias stress (NBS). The ΔV_on of the In_0.96W_0.04OC TFT was always smaller than that of In_0.98W_0.02O TFT under PBS. Moreover, it is clear that the ΔV_on (∼ 0 V) of In_0.96W_0.04OC TFT was improved significantly compared to that (-0.5 V) of In_0.98W_0.02O TFT under the NBS of 5000 s. We concluded that the In_1-xW_xOC film is one of the promising candidates as InO_x-based metal oxide semiconductor channel material.

本文言語	English
ホスト出版物のタイトル	Thin Film Transistors 13, TFT 13
編集者	Y. Kuo
出版社	Electrochemical Society Inc.
ページ	149-156
ページ数	8
版	10
ISBN（電子版）	9781607687276, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOI	https://doi.org/10.1149/07510.0149ecst
出版ステータス	Published - 2016
イベント	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States 継続期間: 2016 10月 2 → 2016 10月 7

出版物シリーズ

名前	ECS Transactions
番号	10
巻	75
ISSN（印刷版）	1938-6737
ISSN（電子版）	1938-5862

Other

Other	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
国/地域	United States
City	Honolulu
Period	16/10/2 → 16/10/7

ASJC Scopus subject areas

工学（全般）

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10.1149/07510.0149ecst

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引用スタイル

Kurishima, K., Nabatame, T., Kizu, T., Mitoma, N., Tsukagoshi, K., Sawada, T., Ohi, A., Yamamoto, I., Ohishi, T., Chikyow, T., & Ogura, A. (2016). Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability. In Y. Kuo (Ed.), Thin Film Transistors 13, TFT 13 (10 ed., pp. 149-156). (ECS Transactions; Vol. 75, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/07510.0149ecst

Kurishima, K, Nabatame, T, Kizu, T, Mitoma, N, Tsukagoshi, K, Sawada, T, Ohi, A, Yamamoto, I, Ohishi, T, Chikyow, T & Ogura, A 2016, Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability. in Y Kuo (ed.), Thin Film Transistors 13, TFT 13. 10 edn, ECS Transactions, no. 10, vol. 75, Electrochemical Society Inc., pp. 149-156, Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07510.0149ecst

@inproceedings{ceb41640bf0245b2ad1df1e0135fccb7,

title = "Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability",

abstract = "We studied characteristic of carbon-doped indium-tungsten-oxide (In1-xWxOC) thin film transistors (TFTs) with SiO2 gate insulator.The In1-xWxOC films, were fabricated by co-sputtering method with WC and In2O3 targets, had an amorphous structure and maintained W-C bond even after annealing at 300°C. The saturation field-effect mobility, on/off current ratio and subthreshold swing values of the In0.96W0.04OC TFT were 5.6 cm2/Vs, 1.0 × 109 and 0.52 V/decade, respectively. To effect of doped carbon in In1-xWxOC channel on reliability of transistor properties, we compared the turn on voltage shift (ΔVon) behavior between the In0.96W0.04OC and In0.98W0.02O TFTs under positive gate bias stress (PBS) and negative gate bias stress (NBS). The ΔVon of the In0.96W0.04OC TFT was always smaller than that of In0.98W0.02O TFT under PBS. Moreover, it is clear that the ΔVon (∼ 0 V) of In0.96W0.04OC TFT was improved significantly compared to that (-0.5 V) of In0.98W0.02O TFT under the NBS of 5000 s. We concluded that the In1-xWxOC film is one of the promising candidates as InOx-based metal oxide semiconductor channel material.",

author = "Kazunori Kurishima and Toshihide Nabatame and Takio Kizu and Nobuhiko Mitoma and Kazuhito Tsukagoshi and Tomomi Sawada and Akihiko Ohi and Ippei Yamamoto and Tomoji Ohishi and Toyohiro Chikyow and Atsushi Ogura",

note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.; Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

year = "2016",

doi = "10.1149/07510.0149ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "149--156",

editor = "Y. Kuo",

booktitle = "Thin Film Transistors 13, TFT 13",

edition = "10",

}

TY - GEN

T1 - Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

AU - Kurishima, Kazunori

AU - Nabatame, Toshihide

AU - Kizu, Takio

AU - Mitoma, Nobuhiko

AU - Tsukagoshi, Kazuhito

AU - Sawada, Tomomi

AU - Ohi, Akihiko

AU - Yamamoto, Ippei

AU - Ohishi, Tomoji

AU - Chikyow, Toyohiro

AU - Ogura, Atsushi

PY - 2016

Y1 - 2016

N2 - We studied characteristic of carbon-doped indium-tungsten-oxide (In1-xWxOC) thin film transistors (TFTs) with SiO2 gate insulator.The In1-xWxOC films, were fabricated by co-sputtering method with WC and In2O3 targets, had an amorphous structure and maintained W-C bond even after annealing at 300°C. The saturation field-effect mobility, on/off current ratio and subthreshold swing values of the In0.96W0.04OC TFT were 5.6 cm2/Vs, 1.0 × 109 and 0.52 V/decade, respectively. To effect of doped carbon in In1-xWxOC channel on reliability of transistor properties, we compared the turn on voltage shift (ΔVon) behavior between the In0.96W0.04OC and In0.98W0.02O TFTs under positive gate bias stress (PBS) and negative gate bias stress (NBS). The ΔVon of the In0.96W0.04OC TFT was always smaller than that of In0.98W0.02O TFT under PBS. Moreover, it is clear that the ΔVon (∼ 0 V) of In0.96W0.04OC TFT was improved significantly compared to that (-0.5 V) of In0.98W0.02O TFT under the NBS of 5000 s. We concluded that the In1-xWxOC film is one of the promising candidates as InOx-based metal oxide semiconductor channel material.

AB - We studied characteristic of carbon-doped indium-tungsten-oxide (In1-xWxOC) thin film transistors (TFTs) with SiO2 gate insulator.The In1-xWxOC films, were fabricated by co-sputtering method with WC and In2O3 targets, had an amorphous structure and maintained W-C bond even after annealing at 300°C. The saturation field-effect mobility, on/off current ratio and subthreshold swing values of the In0.96W0.04OC TFT were 5.6 cm2/Vs, 1.0 × 109 and 0.52 V/decade, respectively. To effect of doped carbon in In1-xWxOC channel on reliability of transistor properties, we compared the turn on voltage shift (ΔVon) behavior between the In0.96W0.04OC and In0.98W0.02O TFTs under positive gate bias stress (PBS) and negative gate bias stress (NBS). The ΔVon of the In0.96W0.04OC TFT was always smaller than that of In0.98W0.02O TFT under PBS. Moreover, it is clear that the ΔVon (∼ 0 V) of In0.96W0.04OC TFT was improved significantly compared to that (-0.5 V) of In0.98W0.02O TFT under the NBS of 5000 s. We concluded that the In1-xWxOC film is one of the promising candidates as InOx-based metal oxide semiconductor channel material.

UR - http://www.scopus.com/inward/record.url?scp=84991666233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991666233&partnerID=8YFLogxK

U2 - 10.1149/07510.0149ecst

DO - 10.1149/07510.0149ecst

M3 - Conference contribution

AN - SCOPUS:84991666233

T3 - ECS Transactions

SP - 149

EP - 156

BT - Thin Film Transistors 13, TFT 13

A2 - Kuo, Y.

PB - Electrochemical Society Inc.

T2 - Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting

Y2 - 2 October 2016 through 7 October 2016

ER -

Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

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