Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

Kazunori Kurishima, Toshihide Nabatame, Takio Kizu, Nobuhiko Mitoma, Kazuhito Tsukagoshi, Tomomi Sawada, Akihiko Ohi, Ippei Yamamoto, Tomoji Ohishi, Toyohiro Chikyow, Atsushi Ogura

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

We studied characteristic of carbon-doped indium-tungsten-oxide (In1-xWxOC) thin film transistors (TFTs) with SiO2 gate insulator.The In1-xWxOC films, were fabricated by co-sputtering method with WC and In2O3 targets, had an amorphous structure and maintained W-C bond even after annealing at 300°C. The saturation field-effect mobility, on/off current ratio and subthreshold swing values of the In0.96W0.04OC TFT were 5.6 cm2/Vs, 1.0 × 109 and 0.52 V/decade, respectively. To effect of doped carbon in In1-xWxOC channel on reliability of transistor properties, we compared the turn on voltage shift (ΔVon) behavior between the In0.96W0.04OC and In0.98W0.02O TFTs under positive gate bias stress (PBS) and negative gate bias stress (NBS). The ΔVon of the In0.96W0.04OC TFT was always smaller than that of In0.98W0.02O TFT under PBS. Moreover, it is clear that the ΔVon (∼ 0 V) of In0.96W0.04OC TFT was improved significantly compared to that (-0.5 V) of In0.98W0.02O TFT under the NBS of 5000 s. We concluded that the In1-xWxOC film is one of the promising candidates as InOx-based metal oxide semiconductor channel material.

元の言語English
ホスト出版物のタイトルThin Film Transistors 13, TFT 13
出版者Electrochemical Society Inc.
ページ149-156
ページ数8
75
エディション10
ISBN(電子版)9781607685395
DOI
出版物ステータスPublished - 2016
イベントSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
継続期間: 2016 10 22016 10 7

Other

OtherSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
United States
Honolulu
期間16/10/216/10/7

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Kurishima, K., Nabatame, T., Kizu, T., Mitoma, N., Tsukagoshi, K., Sawada, T., ... Ogura, A. (2016). Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability. : Thin Film Transistors 13, TFT 13 (10 版, 巻 75, pp. 149-156). Electrochemical Society Inc.. https://doi.org/10.1149/07510.0149ecst