Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Hiroyuki Oguchi; Shigehito Isobe; Hiroki Kuwano; Susumu Shiraki; Shin Ichi Orimo; Taro Hitosugi

doi:10.1063/1.4931080

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Hiroyuki Oguchi, Shigehito Isobe, Hiroki Kuwano, Susumu Shiraki, Shin Ichi Orimo, Taro Hitosugi

研究成果: Article › 査読

10 被引用数 (Scopus)

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We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250°C under a hydrogen pressure of 1.3 × 10^-2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R_RMS of ∼0.4 nm.

本文言語	English
論文番号	096106
ジャーナル	APL Materials
巻	3
号	9
DOI	https://doi.org/10.1063/1.4931080
出版ステータス	Published - 2015 9月 1
外部発表	はい

ASJC Scopus subject areas

材料科学（全般）
工学（全般）

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10.1063/1.4931080

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title = "Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH",

abstract = "We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250°C under a hydrogen pressure of 1.3 × 10-2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness RRMS of ∼0.4 nm.",

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AU - Oguchi, Hiroyuki

AU - Isobe, Shigehito

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AU - Orimo, Shin Ichi

AU - Hitosugi, Taro

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N2 - We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250°C under a hydrogen pressure of 1.3 × 10-2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness RRMS of ∼0.4 nm.

AB - We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250°C under a hydrogen pressure of 1.3 × 10-2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness RRMS of ∼0.4 nm.

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Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

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