Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.
|出版ステータス||Published - 1998 1月 1|
|イベント||Proceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA|
継続期間: 1998 5月 3 → 1998 5月 8
|Other||Proceedings of the 1998 International Quantum Electronics Conference|
|City||San Francisco, CA, USA|
|Period||98/5/3 → 98/5/8|
ASJC Scopus subject areas