Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells

Xudong Fan, T. Takagahara, J. E. Cunningham, Hailin Wang

研究成果: Article査読

75 被引用数 (Scopus)

抄録

We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers.

本文言語English
ページ(範囲)857-861
ページ数5
ジャーナルSolid State Communications
108
11
DOI
出版ステータスPublished - 1998 11 13
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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