抄録
We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers.
本文言語 | English |
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ページ(範囲) | 857-861 |
ページ数 | 5 |
ジャーナル | Solid State Communications |
巻 | 108 |
号 | 11 |
DOI | |
出版ステータス | Published - 1998 11月 13 |
外部発表 | はい |
ASJC Scopus subject areas
- 化学 (全般)
- 凝縮系物理学
- 材料化学