Quantum decoherence of excited states in self assembled quantum dots

H. Htoon; D. Kulik; C. K. Shih; O. Baklenov; A. L. Holmes; Toshihide Takagahara

doi:10.1109/QELS.2001.961794

Quantum decoherence of excited states in self assembled quantum dots

H. Htoon, D. Kulik, C. K. Shih, O. Baklenov, A. L. Holmes, Toshihide Takagahara

研究成果

抄録

Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T₂) of various excited sates of hundreds of individual In_0.5Ga_0.5As SAQDs grown by molecular beam epitaxy.

本文言語	English
ホスト出版物のタイトル	Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	20
ページ数	1
ISBN（印刷版）	155752663X, 9781557526632
DOI	https://doi.org/10.1109/QELS.2001.961794
出版ステータス	Published - 2001
外部発表	はい
イベント	Quantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States 継続期間: 2001 5月 6 → 2001 5月 11

Other

Other	Quantum Electronics and Laser Science Conference, QELS 2001
国/地域	United States
City	Baltimore
Period	01/5/6 → 01/5/11

ASJC Scopus subject areas

電子工学および電気工学
放射線

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10.1109/QELS.2001.961794

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Htoon, H., Kulik, D., Shih, C. K., Baklenov, O., Holmes, A. L., & Takagahara, T. (2001). Quantum decoherence of excited states in self assembled quantum dots. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001 (pp. 20). [961794] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/QELS.2001.961794

Htoon, H, Kulik, D, Shih, CK, Baklenov, O, Holmes, AL & Takagahara, T 2001, Quantum decoherence of excited states in self assembled quantum dots. in Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001., 961794, Institute of Electrical and Electronics Engineers Inc., pp. 20, Quantum Electronics and Laser Science Conference, QELS 2001, Baltimore, United States, 01/5/6. https://doi.org/10.1109/QELS.2001.961794

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abstract = "Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T2) of various excited sates of hundreds of individual In0.5Ga0.5As SAQDs grown by molecular beam epitaxy.",

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AU - Kulik, D.

AU - Shih, C. K.

AU - Baklenov, O.

AU - Holmes, A. L.

AU - Takagahara, Toshihide

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AB - Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T2) of various excited sates of hundreds of individual In0.5Ga0.5As SAQDs grown by molecular beam epitaxy.

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Quantum decoherence of excited states in self assembled quantum dots

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