Quantum wells with enhanced exciton effects and optical non-linearity

Eiichi Hanamura, Naoto Nagaosa, Masami Kumagai, Toshihide Takagahara

研究成果: Article

91 引用 (Scopus)

抄録

Exciton effects are studied theoretically for a quantum well of a semiconductor sandwiched by barriers with a smaller dielectric constant and a larger energy gap. The exciton binding energy increases markedly so that the radiative decay rate of the exciton and the non-linear optical susceptibility are also shown to be enhanced.

元の言語English
ページ(範囲)255-258
ページ数4
ジャーナルMaterials Science and Engineering B
1
発行部数3-4
DOI
出版物ステータスPublished - 1988
外部発表Yes

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Excitons
Semiconductor quantum wells
nonlinearity
excitons
quantum wells
Binding energy
decay rates
Energy gap
Permittivity
binding energy
permittivity
Semiconductor materials
magnetic permeability
LDS 751

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Engineering(all)

これを引用

Quantum wells with enhanced exciton effects and optical non-linearity. / Hanamura, Eiichi; Nagaosa, Naoto; Kumagai, Masami; Takagahara, Toshihide.

:: Materials Science and Engineering B, 巻 1, 番号 3-4, 1988, p. 255-258.

研究成果: Article

Hanamura, Eiichi ; Nagaosa, Naoto ; Kumagai, Masami ; Takagahara, Toshihide. / Quantum wells with enhanced exciton effects and optical non-linearity. :: Materials Science and Engineering B. 1988 ; 巻 1, 番号 3-4. pp. 255-258.
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