TY - JOUR
T1 - Quantum wells with enhanced exciton effects and optical non-linearity
AU - Hanamura, Eiichi
AU - Nagaosa, Naoto
AU - Kumagai, Masami
AU - Takagahara, Toshihide
N1 - Funding Information:
Two of the authors (E.H. and N.N.) thank the Ministry of Education, Science and Culture of Japan for financial support under Grant-in-Aid 63604516 for Scientific Research on Priority Areas, New Functionality Materials--Design, Preparation and Control.
PY - 1988/12
Y1 - 1988/12
N2 - Exciton effects are studied theoretically for a quantum well of a semiconductor sandwiched by barriers with a smaller dielectric constant and a larger energy gap. The exciton binding energy increases markedly so that the radiative decay rate of the exciton and the non-linear optical susceptibility are also shown to be enhanced.
AB - Exciton effects are studied theoretically for a quantum well of a semiconductor sandwiched by barriers with a smaller dielectric constant and a larger energy gap. The exciton binding energy increases markedly so that the radiative decay rate of the exciton and the non-linear optical susceptibility are also shown to be enhanced.
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U2 - 10.1016/0921-5107(88)90006-2
DO - 10.1016/0921-5107(88)90006-2
M3 - Article
AN - SCOPUS:0024141322
VL - 1
SP - 255
EP - 258
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 3-4
ER -