抄録
Exciton effects are studied theoretically for a quantum well of a semiconductor sandwiched by barriers with a smaller dielectric constant and a larger energy gap. The exciton binding energy increases markedly so that the radiative decay rate of the exciton and the non-linear optical susceptibility are also shown to be enhanced.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 255-258 |
| ページ数 | 4 |
| ジャーナル | Materials Science and Engineering B |
| 巻 | 1 |
| 発行部数 | 3-4 |
| DOI | |
| 出版物ステータス | Published - 1988 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Engineering(all)
これを引用
Quantum wells with enhanced exciton effects and optical non-linearity. / Hanamura, Eiichi; Nagaosa, Naoto; Kumagai, Masami; Takagahara, Toshihide.
：: Materials Science and Engineering B, 巻 1, 番号 3-4, 1988, p. 255-258.研究成果: Article
}
TY - JOUR
T1 - Quantum wells with enhanced exciton effects and optical non-linearity
AU - Hanamura, Eiichi
AU - Nagaosa, Naoto
AU - Kumagai, Masami
AU - Takagahara, Toshihide
PY - 1988
Y1 - 1988
N2 - Exciton effects are studied theoretically for a quantum well of a semiconductor sandwiched by barriers with a smaller dielectric constant and a larger energy gap. The exciton binding energy increases markedly so that the radiative decay rate of the exciton and the non-linear optical susceptibility are also shown to be enhanced.
AB - Exciton effects are studied theoretically for a quantum well of a semiconductor sandwiched by barriers with a smaller dielectric constant and a larger energy gap. The exciton binding energy increases markedly so that the radiative decay rate of the exciton and the non-linear optical susceptibility are also shown to be enhanced.
UR - http://www.scopus.com/inward/record.url?scp=0024141322&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024141322&partnerID=8YFLogxK
U2 - 10.1016/0921-5107(88)90006-2
DO - 10.1016/0921-5107(88)90006-2
M3 - Article
AN - SCOPUS:0024141322
VL - 1
SP - 255
EP - 258
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 3-4
ER -