Raman spectra of GaPAs-GaP heterostructure waveguides

T. Tanabe; K. Suto; T. Kimura; T. Ohtani; J. Nishizawa

doi:10.1016/j.mssp.2003.07.028

Raman spectra of GaPAs-GaP heterostructure waveguides

T. Tanabe, K. Suto, T. Kimura, T. Ohtani, J. Nishizawa

研究成果: Article › 査読

抄録

A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm^-1 (α = 1.9 cm^-1). The free carrier concentration of the GaPAs layer is 1 × 10¹⁶ cm ^-3 (α = 0.05 cm^-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.

本文言語	English
ページ（範囲）	445-447
ページ数	3
ジャーナル	Materials Science in Semiconductor Processing
巻	6
号	5-6
DOI	https://doi.org/10.1016/j.mssp.2003.07.028
出版ステータス	Published - 2003 10
外部発表	はい

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

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10.1016/j.mssp.2003.07.028

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title = "Raman spectra of GaPAs-GaP heterostructure waveguides",

abstract = "A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm-1 (α = 1.9 cm-1). The free carrier concentration of the GaPAs layer is 1 × 1016 cm -3 (α = 0.05 cm-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.",

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author = "T. Tanabe and K. Suto and T. Kimura and T. Ohtani and J. Nishizawa",

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T1 - Raman spectra of GaPAs-GaP heterostructure waveguides

AU - Tanabe, T.

AU - Suto, K.

AU - Kimura, T.

AU - Ohtani, T.

AU - Nishizawa, J.

PY - 2003/10

Y1 - 2003/10

N2 - A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm-1 (α = 1.9 cm-1). The free carrier concentration of the GaPAs layer is 1 × 1016 cm -3 (α = 0.05 cm-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.

AB - A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm-1 (α = 1.9 cm-1). The free carrier concentration of the GaPAs layer is 1 × 1016 cm -3 (α = 0.05 cm-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.

KW - GaPAs

KW - Optical waveguide

KW - Phonon

KW - Raman amplifier

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DO - 10.1016/j.mssp.2003.07.028

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JO - Materials Science in Semiconductor Processing

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Raman spectra of GaPAs-GaP heterostructure waveguides

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