抄録
A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm-1 (α = 1.9 cm-1). The free carrier concentration of the GaPAs layer is 1 × 1016 cm -3 (α = 0.05 cm-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.
本文言語 | English |
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ページ(範囲) | 445-447 |
ページ数 | 3 |
ジャーナル | Materials Science in Semiconductor Processing |
巻 | 6 |
号 | 5-6 |
DOI | |
出版ステータス | Published - 2003 10月 |
外部発表 | はい |
ASJC Scopus subject areas
- 材料科学(全般)
- 凝縮系物理学
- 材料力学
- 機械工学