Raman spectroscopic stress evaluation of femtosecond-laser-modified region inside 4H-SIC

Minoru Yamamoto, Manato Deki, Tomonori Takahashi, Takuro Tomita, Tatsuya Okada, Shigeki Matsuo, Shuichi Hashimoto, Makoto Yamaguchi, Kei Nakagawa, Nobutomo Uehara, Masaru Kamano

研究成果: Article

10 引用 (Scopus)

抜粋

A femtosecond (fs)-laser-modified region inside single-crystal silicon carbide was studied by micro-Raman spectroscopy. Higher and lower peak energy shifts of the transverse optical (TO) phonon mode, which correspond to compressive and tensile stresses, were observed. Mappings of peak energies and spectral widths of the TO phonon mode showed a clear correspondence with the distributions of strained layers observed by transmission electron microscopy. The maximum compressive and tensile stresses were estimated to be 1.4 and 0.4 GPa, respectively. This result indicates that the periodic strained layers contain many nano-voids which are formed by nano-explosions induced by fs laser irradiation.

元の言語English
記事番号016603
ジャーナルApplied Physics Express
3
発行部数1
DOI
出版物ステータスPublished - 2010 1 1
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Yamamoto, M., Deki, M., Takahashi, T., Tomita, T., Okada, T., Matsuo, S., Hashimoto, S., Yamaguchi, M., Nakagawa, K., Uehara, N., & Kamano, M. (2010). Raman spectroscopic stress evaluation of femtosecond-laser-modified region inside 4H-SIC. Applied Physics Express, 3(1), [016603]. https://doi.org/10.1143/APEX.3.016603