Raman spectroscopic stress evaluation of femtosecond-laser-modified region inside 4H-SIC

Minoru Yamamoto, Manato Deki, Tomonori Takahashi, Takuro Tomita, Tatsuya Okada, Shigeki Matsuo, Shuichi Hashimoto, Makoto Yamaguchi, Kei Nakagawa, Nobutomo Uehara, Masaru Kamano

研究成果: Article査読

10 被引用数 (Scopus)

抄録

A femtosecond (fs)-laser-modified region inside single-crystal silicon carbide was studied by micro-Raman spectroscopy. Higher and lower peak energy shifts of the transverse optical (TO) phonon mode, which correspond to compressive and tensile stresses, were observed. Mappings of peak energies and spectral widths of the TO phonon mode showed a clear correspondence with the distributions of strained layers observed by transmission electron microscopy. The maximum compressive and tensile stresses were estimated to be 1.4 and 0.4 GPa, respectively. This result indicates that the periodic strained layers contain many nano-voids which are formed by nano-explosions induced by fs laser irradiation.

本文言語English
論文番号016603
ジャーナルApplied Physics Express
3
1
DOI
出版ステータスPublished - 2010 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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