TY - JOUR
T1 - Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC
AU - Yamaguchi, Makoto
AU - Ueno, Shigeru
AU - Kumai, Ryota
AU - Kinoshita, Keita
AU - Murai, Toshiaki
AU - Tomita, Takuro
AU - Matsuo, Shigeki
AU - Hashimoto, Shuichi
PY - 2010/4/1
Y1 - 2010/4/1
N2 - Raman spectroscopy was performed to investigate microscopic structural changes associated with a ripple structure formation initiated by femtosecond laser irradiation on the surface of single-crystal silicon carbide. The amorphous phases of silicon carbide, silicon, and carbon were observed. The intensity ratio between amorphous silicon carbide and silicon changed discretely at the boundary between fine and coarse ripples. The physical processes responsible for the formation of the ripple structure are discussed.
AB - Raman spectroscopy was performed to investigate microscopic structural changes associated with a ripple structure formation initiated by femtosecond laser irradiation on the surface of single-crystal silicon carbide. The amorphous phases of silicon carbide, silicon, and carbon were observed. The intensity ratio between amorphous silicon carbide and silicon changed discretely at the boundary between fine and coarse ripples. The physical processes responsible for the formation of the ripple structure are discussed.
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U2 - 10.1007/s00339-010-5569-4
DO - 10.1007/s00339-010-5569-4
M3 - Article
AN - SCOPUS:77953537511
SN - 0947-8396
VL - 99
SP - 23
EP - 27
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 1
ER -