Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC

Makoto Yamaguchi, Shigeru Ueno, Ryota Kumai, Keita Kinoshita, Toshiaki Murai, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto

研究成果: Article

36 引用 (Scopus)

抄録

Raman spectroscopy was performed to investigate microscopic structural changes associated with a ripple structure formation initiated by femtosecond laser irradiation on the surface of single-crystal silicon carbide. The amorphous phases of silicon carbide, silicon, and carbon were observed. The intensity ratio between amorphous silicon carbide and silicon changed discretely at the boundary between fine and coarse ripples. The physical processes responsible for the formation of the ripple structure are discussed.

元の言語English
ページ(範囲)23-27
ページ数5
ジャーナルApplied Physics A: Materials Science and Processing
99
発行部数1
DOI
出版物ステータスPublished - 2010 4
外部発表Yes

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Ultrashort pulses
Silicon carbide
Phase transitions
Single crystals
Silicon
Laser beam effects
Amorphous silicon
Raman spectroscopy
Carbon
silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

これを引用

Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC. / Yamaguchi, Makoto; Ueno, Shigeru; Kumai, Ryota; Kinoshita, Keita; Murai, Toshiaki; Tomita, Takuro; Matsuo, Shigeki; Hashimoto, Shuichi.

:: Applied Physics A: Materials Science and Processing, 巻 99, 番号 1, 04.2010, p. 23-27.

研究成果: Article

Yamaguchi, Makoto ; Ueno, Shigeru ; Kumai, Ryota ; Kinoshita, Keita ; Murai, Toshiaki ; Tomita, Takuro ; Matsuo, Shigeki ; Hashimoto, Shuichi. / Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC. :: Applied Physics A: Materials Science and Processing. 2010 ; 巻 99, 番号 1. pp. 23-27.
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