Raman spectroscopy was performed to investigate microscopic structural changes associated with a ripple structure formation initiated by femtosecond laser irradiation on the surface of single-crystal silicon carbide. The amorphous phases of silicon carbide, silicon, and carbon were observed. The intensity ratio between amorphous silicon carbide and silicon changed discretely at the boundary between fine and coarse ripples. The physical processes responsible for the formation of the ripple structure are discussed.
|ジャーナル||Applied Physics A: Materials Science and Processing|
|出版ステータス||Published - 2010 4月 1|
ASJC Scopus subject areas
- 化学 (全般)