Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC

Makoto Yamaguchi, Shigeru Ueno, Ryota Kumai, Keita Kinoshita, Toshiaki Murai, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto

研究成果: Article査読

42 被引用数 (Scopus)

抄録

Raman spectroscopy was performed to investigate microscopic structural changes associated with a ripple structure formation initiated by femtosecond laser irradiation on the surface of single-crystal silicon carbide. The amorphous phases of silicon carbide, silicon, and carbon were observed. The intensity ratio between amorphous silicon carbide and silicon changed discretely at the boundary between fine and coarse ripples. The physical processes responsible for the formation of the ripple structure are discussed.

本文言語English
ページ(範囲)23-27
ページ数5
ジャーナルApplied Physics A: Materials Science and Processing
99
1
DOI
出版ステータスPublished - 2010 4 1
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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