Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects

Hiroshi Irie, Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果: Conference article査読

9 被引用数 (Scopus)

抄録

This paper reports a systematic re-investigation of the universality of MOS inversion layer mobility through a careful measurement. We demonstrate for the first time that the definition of the effective normal field for characterizing the universality is variable with the normal electric field, temperature, and substrate doping concentration. In addition, we propose that another new scattering mechanism should be involved to explain the mobility behavior around 100K.

本文言語English
ページ(範囲)459-462
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 2003 12 1
外部発表はい
イベントIEEE International Electron Devices Meeting - Washington, DC, United States
継続期間: 2003 12 82003 12 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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