Reactive ion etching of silicon oxynitride formed by plasma-enhanced chemical vapor deposition

Kazuyoshi Ueno, Takamaro Kikkawa, Ken Tokashiki

研究成果: Conference article査読

17 被引用数 (Scopus)

抄録

A variation in the reactive ion etch (RIE) rate of silicon oxynitride (SiOxNy) films deposited by plasma-enhanced chemical vapor deposition was studied by CHF3 RIE, CHF3 + carbon mono-oxide (CO) RIE and CF4 RIE. The source gas flow rate ratio (R = N2O/SiH4) during the SiOxNy film deposition was varied to obtain a film of different atomic composition. Etch rates decreased in the order of CF4 RIE, CHF3 RIE, and CHF3 + CO RIE, and the etch selectivity of SiO2 over SiOxNy increased in the same order also. The fluorocarbon (CFx) film deposited during a RIE process was analyzed by x-ray photoelectron spectroscopy measurements. Etch rates are found to be correlated to both thickness and atomic composition of the CFx film. Carbon-rich fluorocarbon films are found to be more resistive against RIE.

本文言語English
ページ(範囲)1447-1450
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
13
4
DOI
出版ステータスPublished - 1995 7月 1
外部発表はい
イベントProceedings of the 22nd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-22) - Scottsdale, AZ, USA
継続期間: 1995 1月 81995 1月 12

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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