Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Satoshi Nakazawa, Tetsuzo Ueda, Kaoru Inoue, Tsuyoshi Tanaka, Hiroyasu Ishikawa, Takashi Egawa

研究成果: Article

14 引用 (Scopus)

抄録

In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.

元の言語English
ページ(範囲)2124-2128
ページ数5
ジャーナルIEEE Transactions on Electron Devices
52
発行部数10
DOI
出版物ステータスPublished - 2005 10
外部発表Yes

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quaternary alloys
Ohmic contacts
Field effect transistors
Heterojunctions
heterojunctions
field effect transistors
Polarization
Organic Chemicals
Organic chemicals
Epitaxial layers
Contact resistance
Crystal lattices
Chemical vapor deposition
Energy gap
Metals
Electrons
Chemical analysis
polarization
contact resistance
metalorganic chemical vapor deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

これを引用

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers. / Nakazawa, Satoshi; Ueda, Tetsuzo; Inoue, Kaoru; Tanaka, Tsuyoshi; Ishikawa, Hiroyasu; Egawa, Takashi.

:: IEEE Transactions on Electron Devices, 巻 52, 番号 10, 10.2005, p. 2124-2128.

研究成果: Article

Nakazawa, Satoshi ; Ueda, Tetsuzo ; Inoue, Kaoru ; Tanaka, Tsuyoshi ; Ishikawa, Hiroyasu ; Egawa, Takashi. / Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers. :: IEEE Transactions on Electron Devices. 2005 ; 巻 52, 番号 10. pp. 2124-2128.
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abstract = "In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.",
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AU - Egawa, Takashi

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N2 - In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.

AB - In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.

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