抄録
In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2124-2128 |
| ページ数 | 5 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 52 |
| 号 | 10 |
| DOI | |
| 出版ステータス | Published - 2005 10 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering