Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Satoshi Nakazawa; Tetsuzo Ueda; Kaoru Inoue; Tsuyoshi Tanaka; Hiroyasu Ishikawa; Takashi Egawa

doi:10.1109/TED.2005.856175

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Satoshi Nakazawa, Tetsuzo Ueda, Kaoru Inoue, Tsuyoshi Tanaka, Hiroyasu Ishikawa, Takashi Egawa

研究成果: Article

14 引用（Scopus）

抜粋

In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In_0.09Al_0.32Ga _0.59N capping layer has close total polarization and bandgap to those of the underlying Al_0.26Ga_0.74N layer. The balanced polarization eliminates the depletion of electrons at the In _0.09Al_0.32Ga_0.59N/Al_0.26Ga _0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10^-6 Ω ·cm² or less. Detailed analysis of the source resistance reveals that the series resistance at the In_0.09Al_0.32Ga_0.59N/Al _0.26Ga_0.74N interface is one fifth as low as the resistance at the conventional GaN/Al_0.26 Ga_0.74N interface.

元の言語	English
ページ（範囲）	2124-2128
ページ数	5
ジャーナル	IEEE Transactions on Electron Devices
巻	52
発行部数	10
DOI	https://doi.org/10.1109/TED.2005.856175
出版物ステータス	Published - 2005 10 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

文献にアクセス

10.1109/TED.2005.856175

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これを引用

Nakazawa, S., Ueda, T., Inoue, K., Tanaka, T., Ishikawa, H., & Egawa, T. (2005). Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers. IEEE Transactions on Electron Devices, 52(10), 2124-2128. https://doi.org/10.1109/TED.2005.856175

@article{be1784a4c6974529a47ed2bef5b84934,

title = "Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers",

abstract = "In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.",

keywords = "AlGaN/GaN heterojunction field-effect transistor (HFET), Polarization, Quaternary alloy, Recessed-gate structure, Source resistance",

author = "Satoshi Nakazawa and Tetsuzo Ueda and Kaoru Inoue and Tsuyoshi Tanaka and Hiroyasu Ishikawa and Takashi Egawa",

year = "2005",

month = oct,

day = "1",

doi = "10.1109/TED.2005.856175",

language = "English",

volume = "52",

pages = "2124--2128",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

AU - Nakazawa, Satoshi

AU - Ueda, Tetsuzo

AU - Inoue, Kaoru

AU - Tanaka, Tsuyoshi

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

PY - 2005/10/1

Y1 - 2005/10/1

N2 - In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.

AB - In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.

KW - AlGaN/GaN heterojunction field-effect transistor (HFET)

KW - Polarization

KW - Quaternary alloy

KW - Recessed-gate structure

KW - Source resistance

UR - http://www.scopus.com/inward/record.url?scp=33645510125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645510125&partnerID=8YFLogxK

U2 - 10.1109/TED.2005.856175

DO - 10.1109/TED.2005.856175

M3 - Article

AN - SCOPUS:33645510125

VL - 52

SP - 2124

EP - 2128

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -