Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD

Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo, Masayoshi Umeno

研究成果: Conference contribution

4 引用 (Scopus)

抄録

A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.

元の言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting
出版者IEEE
ページ401-404
ページ数4
出版物ステータスPublished - 1999
外部発表Yes
イベント1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
継続期間: 1999 12 51999 12 8

Other

Other1999 IEEE International Devices Meeting (IEDM)
Washington, DC, USA
期間99/12/599/12/8

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Metallorganic chemical vapor deposition
High electron mobility transistors
Sapphire
Two dimensional electron gas
Transconductance
Gates (transistor)
Drain current
Substrates
Threshold voltage
Temperature
Carrier concentration
Heterojunctions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Egawa, T., Ishikawa, H., Jimbo, T., & Umeno, M. (1999). Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. : Technical Digest - International Electron Devices Meeting (pp. 401-404). IEEE.

Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. / Egawa, Takashi; Ishikawa, Hiroyasu; Jimbo, Takashi; Umeno, Masayoshi.

Technical Digest - International Electron Devices Meeting. IEEE, 1999. p. 401-404.

研究成果: Conference contribution

Egawa, T, Ishikawa, H, Jimbo, T & Umeno, M 1999, Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. : Technical Digest - International Electron Devices Meeting. IEEE, pp. 401-404, 1999 IEEE International Devices Meeting (IEDM), Washington, DC, USA, 99/12/5.
Egawa T, Ishikawa H, Jimbo T, Umeno M. Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. : Technical Digest - International Electron Devices Meeting. IEEE. 1999. p. 401-404
Egawa, Takashi ; Ishikawa, Hiroyasu ; Jimbo, Takashi ; Umeno, Masayoshi. / Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. Technical Digest - International Electron Devices Meeting. IEEE, 1999. pp. 401-404
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abstract = "A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.",
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N2 - A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.

AB - A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.

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