抄録
A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Technical Digest - International Electron Devices Meeting |
| 出版者 | IEEE |
| ページ | 401-404 |
| ページ数 | 4 |
| 出版物ステータス | Published - 1999 |
| 外部発表 | Yes |
| イベント | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 継続期間: 1999 12 5 → 1999 12 8 |
Other
| Other | 1999 IEEE International Devices Meeting (IEDM) |
|---|---|
| 市 | Washington, DC, USA |
| 期間 | 99/12/5 → 99/12/8 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. / Egawa, Takashi; Ishikawa, Hiroyasu; Jimbo, Takashi; Umeno, Masayoshi.
Technical Digest - International Electron Devices Meeting. IEEE, 1999. p. 401-404.研究成果: Conference contribution
}
TY - GEN
T1 - Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
AU - Jimbo, Takashi
AU - Umeno, Masayoshi
PY - 1999
Y1 - 1999
N2 - A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.
AB - A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.
UR - http://www.scopus.com/inward/record.url?scp=0033332827&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033332827&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0033332827
SP - 401
EP - 404
BT - Technical Digest - International Electron Devices Meeting
PB - IEEE
ER -