TY - JOUR
T1 - Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
AU - Jimbo, Takashi
AU - Umeno, Masayoshi
PY - 1999/12/1
Y1 - 1999/12/1
N2 - A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm2/V·s and 5.1 × 1012 cm-2 at 300 K, and 12000 cm2/V·s and 2.8 × 1012 cm-2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.
AB - A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm2/V·s and 5.1 × 1012 cm-2 at 300 K, and 12000 cm2/V·s and 2.8 × 1012 cm-2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.
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M3 - Conference article
AN - SCOPUS:0033332827
SP - 401
EP - 404
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
T2 - 1999 IEEE International Devices Meeting (IEDM)
Y2 - 5 December 1999 through 8 December 1999
ER -