Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

T. Egawa, H. Ishikawa, M. Umeno, T. Jimbo

研究成果: Article査読

81 被引用数 (Scopus)

抄録

A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metalorganic chemical vapor deposition. The two-dimensional electron gas mobility as high as 9260 cm2/Vs with the sheet carrier density 4.8× 1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length 2.1 μm at 25 °C. At an elevated temperature of 350 °C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively.

本文言語English
ページ(範囲)121-123
ページ数3
ジャーナルApplied Physics Letters
76
1
DOI
出版ステータスPublished - 2000 1 3
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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