Recycling SiC Focus Rings for Reactive Ion Etching Equipment by Insertless Diffusion Bonding using Hot Isostatic Pressing

Tetsuyuki Matsumoto, Junji Kataoka, Reiko Saito, Tetsuya Homma

研究成果: Article査読

抄録

SiC focus rings are mount on the stage at the surround of wafer in the reactive ion etching chamber, in order to make the etching rate uniform. SiC is used for the material of focus ring because it has higher plasma resistance than Si. We investigated a new method to recycle SiC without using the chemical vapor deposition (CVD) method. The recycling process consists of grinding, dry cleaning, hot isostatic pressing (HIP), atmospheric burning, and aqueous solution cleaning. As a result, diffusion bonding with a tensile strength of 100 kg cm-2 or more was realized by reducing the surface roughness at the diffusion bonding surface to 0.1 μm or less. It was confirmed that the SiC surface was oxidized with thickness 135 nm by atmospheric burning in air ambience. It was also confirmed that the oxide layer at the SiC surface was completely removed by the aqueous solution cleaning. We have reduced the cost to 50% for SiC focus ring replacement by using the recycle method.

本文言語English
論文番号124006
ジャーナルECS Journal of Solid State Science and Technology
9
12
DOI
出版ステータスPublished - 2020 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Recycling SiC Focus Rings for Reactive Ion Etching Equipment by Insertless Diffusion Bonding using Hot Isostatic Pressing」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル