Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer

Y. Saito, R. Tsurumaki, N. Noda, K. Horio

研究成果: Conference contribution

抄録

We make a two-dimensional transient analysis of fieldplate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density NDA and the field plate affect buffer-related lag phenomena and current collapse. NDA is varied between 1017 cm-3 and 8×1017 cm-3. It is shown that without a field plate the drain lag and current collapse increase with increasing NDA as expected, although the gate lag decreases when NDA becomes higher than 2×1017 cm-3. But with a field plate, surprisingly, the lags and current collapse decrease when NDA becomes high. This is attributed to the fact that the reduction in drain lag and current collapse by introducing a field plate becomes more significant when NDA becomes higher.

本文言語English
ホスト出版物のタイトルInformatics, Electronics and Microsystems - TechConnect Briefs 2017
編集者Fiona Case, Matthew Laudon, Bart Romanowicz, Fiona Case
出版社TechConnect
ページ27-30
ページ数4
ISBN(電子版)9780998878218
出版ステータスPublished - 2017 1 1
イベント11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
継続期間: 2017 5 142017 5 17

出版物シリーズ

名前Advanced Materials - TechConnect Briefs 2017
4

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
国/地域United States
CityWashington
Period17/5/1417/5/17

ASJC Scopus subject areas

  • 燃料技術
  • 表面、皮膜および薄膜
  • バイオテクノロジー
  • 流体および伝熱

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