Reduction of buffer-related current collapse in GaN FETs under favour of a field plate

K. Itagaki, A. Nakajima, K. Horio

研究成果: Conference article

1 被引用数 (Scopus)

抄録

Two-dimensional transient analysis of GaN MESFETs with a semi-insulating buffer layer is performed in which a deep donor and a deep acceptor are considered in the buffer layer, and the results are compared between the two cases with and without a field plate. It is shown that buffer-related drain lag is reduced by introducing a field plate because trapping effects become smaller. It is also shown that current collapse and gate lag are also reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, indicating that there is an optimum SiN thickness to minimize the buffer-related current collapse and drain lag in GaN-based FETs.

本文言語English
ページ(範囲)2976-2978
ページ数3
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
5
9
DOI
出版ステータスPublished - 2008 12 1
イベント34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
継続期間: 2007 10 152007 10 18

ASJC Scopus subject areas

  • Condensed Matter Physics

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