Two-dimensional transient analysis of GaN MESFETs with a semi-insulating buffer layer is performed in which a deep donor and a deep acceptor are considered in the buffer layer, and the results are compared between the two cases with and without a field plate. It is shown that buffer-related drain lag is reduced by introducing a field plate because trapping effects become smaller. It is also shown that current collapse and gate lag are also reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, indicating that there is an optimum SiN thickness to minimize the buffer-related current collapse and drain lag in GaN-based FETs.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2008|
|イベント||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
継続期間: 2007 10月 15 → 2007 10月 18
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