Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

Hiroyasu Ishikawa, Keita Shimanaka

研究成果: Article

7 引用 (Scopus)

抄録

We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 °C, resulting in the formation of recesses on its surface by meltback etching. Finally, a GaN film is grown on the Ga-induced meltback-etched surface using a high-temperature-grown AlN intermediate layer. After the growth of the GaN film, 0.51-μm-diameter pits were observed on the GaN surface. A cathodoluminescence image reveals that low-threading-dislocation-density regions were successfully grown around the pits.

元の言語English
ページ(範囲)196-199
ページ数4
ジャーナルJournal of Crystal Growth
315
発行部数1
DOI
出版物ステータスPublished - 2011 1 15

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Substrates
recesses
Cathodoluminescence
Metallorganic chemical vapor deposition
cathodoluminescence
metalorganic chemical vapor deposition
Etching
etching
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

これを引用

Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates. / Ishikawa, Hiroyasu; Shimanaka, Keita.

:: Journal of Crystal Growth, 巻 315, 番号 1, 15.01.2011, p. 196-199.

研究成果: Article

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