Reinforcement of power factor in N-type multiphase thin film of Si1−x−yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity

Huajun Lai, Ying Peng, Jie Gao, Haili Song, Masashi Kurosawa, Osamu Nakatsuka, Tsunehiro Takeuchi, Lei Miao

研究成果: Article査読

抄録

As the first-generation semiconductor, silicon (Si) exhibits promising prospects in thermoelectric (TE) convention application with the advantages of un-toxic, abundant, robust, and compliant to the integrated circuit. However, Si-based TE materials are always implemented for high-temperature application and deficient at room temperature (RT) ambience. This study displays an N-type Si1−x−yGexSny thin film by carrying out the strategy of metallic modulation doping for enhancing its power factor (PF). It was distinct to observe the extra carriers poured from the precipitated Sn particles without prominent degradation of mobility while sustaining appreciable thermal conductivity. The PF of 12.212and zT of 0.27 were achieved at 125 °C, which illustrated the significant potential for implementation at near RT ambiance.

本文言語English
論文番号113903
ジャーナルApplied Physics Letters
119
11
DOI
出版ステータスPublished - 2021 9 13

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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「Reinforcement of power factor in N-type multiphase thin film of Si<sub>1−x−y</sub>Ge<sub>x</sub>Sn<sub>y</sub> by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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