抄録
This paper discusses the reliability of three-dimensional Au/WSiN interconnections buried in a polyimide layer. Temperature cycle tests and bias stress tests reveal the high stability of this system. It is found that the enhanced degradation occurs at the Au/WSiN viahole contacts, which strongly depends on the current density. SEM analysis reveals the void formation in the Au layer near the Au-WSiN interface, which can be explained by the dam effect created by the WSiN layer.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1659-1662 |
| ページ数 | 4 |
| ジャーナル | Microelectronics Reliability |
| 巻 | 37 |
| 号 | 10-11 |
| DOI | |
| 出版ステータス | Published - 1997 1月 1 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 原子分子物理学および光学
- 安全性、リスク、信頼性、品質管理
- 凝縮系物理学
- 表面、皮膜および薄膜
- 電子工学および電気工学