Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Takashi Egawa, Baijun Zhang, Naohiro Nishikawa, Hiroyasu Ishikawa, Takashi Jimbo

研究成果: Conference article査読

抄録

We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 and 60°C.

本文言語English
ページ(範囲)205-208
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 2001 12 1
外部発表はい
イベントIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
継続期間: 2001 12 22001 12 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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