Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Takashi Egawa, Baijun Zhang, Naohiro Nishikawa, Hiroyasu Ishikawa, Takashi Jimbo

研究成果: Conference article査読


We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 and 60°C.

ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 2001 12月 1
イベントIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
継続期間: 2001 12月 22001 12月 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学


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