Removal of surface-related current slump in field-plate GaAs FETs

F. Hafiz, M. Kumeno, T. Tanaka, K. Horio

研究成果: Conference contribution

抜粋

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that the drain lag and current slump due to surface states can be reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. The dependence of lag phenomena and current slump on fieldplate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.

元の言語English
ホスト出版物のタイトル2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
出版物ステータスPublished - 2012 12 1
イベント27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 - Boston, MA, United States
継続期間: 2012 4 232012 4 26

出版物シリーズ

名前2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

Conference

Conference27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
United States
Boston, MA
期間12/4/2312/4/26

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • これを引用

    Hafiz, F., Kumeno, M., Tanaka, T., & Horio, K. (2012). Removal of surface-related current slump in field-plate GaAs FETs. : 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).