Resistance to active oxidation of Sol-Gel HfO2 coated SiC polycrystal

T. Akashi, M. Kasajima, H. Kiyono

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.

元の言語English
ホスト出版物のタイトルECS Transactions - High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting
ページ185-190
ページ数6
エディション44
DOI
出版物ステータスPublished - 2008 12 1
イベントHigh Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting - Honolulu, HI, United States
継続期間: 2008 10 122008 10 17

出版物シリーズ

名前ECS Transactions
番号44
16
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

Conference

ConferenceHigh Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting
United States
Honolulu, HI
期間08/10/1208/10/17

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Akashi, T., Kasajima, M., & Kiyono, H. (2008). Resistance to active oxidation of Sol-Gel HfO2 coated SiC polycrystal. : ECS Transactions - High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting (44 版, pp. 185-190). (ECS Transactions; 巻数 16, 番号 44). https://doi.org/10.1149/1.3224755