Resistance to active oxidation of Sol-Gel HfO2 coated SiC polycrystal

T. Akashi, M. Kasajima, H. Kiyono

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.

本文言語English
ホスト出版物のタイトルECS Transactions - High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting
出版社Electrochemical Society Inc.
ページ185-190
ページ数6
44
ISBN(印刷版)9781615676392
DOI
出版ステータスPublished - 2009
外部発表はい
イベントHigh Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting - Honolulu, HI, United States
継続期間: 2008 10月 122008 10月 17

出版物シリーズ

名前ECS Transactions
番号44
16
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

ConferenceHigh Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting
国/地域United States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • 工学(全般)

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