Resolution performance of programmable proximity aperture MeV ion beam lithography system

Sergey Gorelick, Timo Sajavaara, Mikko Laitinen, Nitipon Puttaraksa, Harry J. Whitlow

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

An ion beam lithography system for light and heavy ions has been developed at the University of Jyväskylä's Accelerator Laboratory. The system employs a programmable proximity aperture to define the beam. The proximity aperture is made up of four Ta blades with precise straight edges that cut the beam in the horizontal and vertical directions. The blade positions and dimensions are controlled by a pair of high-precision linear-motion positioners. The sample is mounted on a X-Y-Z stage capable of moving with 100 nm precision steps under computer control. The resolution performance of the system is primarily governed by the proximity aperture. Pattern edge sharpness is set by the beam divergence, aperture blade straightness, and secondary and scattered particles from the aperture blade edges. Ray tracing simulations using object oriented toolkit GEANT4 were performed to investigate the beam spatial resolution on the sample defined by the proximity aperture. The results indicate that the edge-scattering does not significantly affect the pattern edge sharpness.

本文言語English
ホスト出版物のタイトルIon-Beam-Based Nanofabrication
出版社Materials Research Society
ページ67-72
ページ数6
ISBN(印刷版)9781558999800
DOI
出版ステータスPublished - 2007
外部発表はい
イベントIon-Beam-Based Nanofabrication - San Francisco, CA, United States
継続期間: 2007 4月 102007 4月 12

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1020
ISSN(印刷版)0272-9172

Conference

ConferenceIon-Beam-Based Nanofabrication
国/地域United States
CitySan Francisco, CA
Period07/4/1007/4/12

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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