Retarded growth of sputtered HfO 2 films on germanium

Koji Kita, Masashi Sasagawa, Masahiro Toyama, Kentaro Kyuno, Akira Toriumi

研究成果: Conference contribution

抄録

HfO 2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO 2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO 2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO 2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO 2/Ge over HfO 2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
編集者J. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R.M. Wallace, S. Guha, H. Koinuma
ページ169-174
ページ数6
811
出版物ステータスPublished - 2004
外部発表Yes
イベントIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States
継続期間: 2004 4 132004 4 16

Other

OtherIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions
United States
San Francisco, CA
期間04/4/1304/4/16

Fingerprint

Germanium
Substrates
Reactive sputtering
Film growth
Oxide films
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

これを引用

Kita, K., Sasagawa, M., Toyama, M., Kyuno, K., & Toriumi, A. (2004). Retarded growth of sputtered HfO 2 films on germanium : J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, ... H. Koinuma (版), Materials Research Society Symposium Proceedings (巻 811, pp. 169-174)

Retarded growth of sputtered HfO 2 films on germanium . / Kita, Koji; Sasagawa, Masashi; Toyama, Masahiro; Kyuno, Kentaro; Toriumi, Akira.

Materials Research Society Symposium Proceedings. 版 / J. Morais; D. Kumar; M. Houssa; R.K. Singh; D. Landheer; R. Ramesh; R.M. Wallace; S. Guha; H. Koinuma. 巻 811 2004. p. 169-174.

研究成果: Conference contribution

Kita, K, Sasagawa, M, Toyama, M, Kyuno, K & Toriumi, A 2004, Retarded growth of sputtered HfO 2 films on germanium : J Morais, D Kumar, M Houssa, RK Singh, D Landheer, R Ramesh, RM Wallace, S Guha & H Koinuma (版), Materials Research Society Symposium Proceedings. 巻. 811, pp. 169-174, Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions, San Francisco, CA, United States, 04/4/13.
Kita K, Sasagawa M, Toyama M, Kyuno K, Toriumi A. Retarded growth of sputtered HfO 2 films on germanium : Morais J, Kumar D, Houssa M, Singh RK, Landheer D, Ramesh R, Wallace RM, Guha S, Koinuma H, 編集者, Materials Research Society Symposium Proceedings. 巻 811. 2004. p. 169-174
Kita, Koji ; Sasagawa, Masashi ; Toyama, Masahiro ; Kyuno, Kentaro ; Toriumi, Akira. / Retarded growth of sputtered HfO 2 films on germanium Materials Research Society Symposium Proceedings. 編集者 / J. Morais ; D. Kumar ; M. Houssa ; R.K. Singh ; D. Landheer ; R. Ramesh ; R.M. Wallace ; S. Guha ; H. Koinuma. 巻 811 2004. pp. 169-174
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