Retarded growth of sputtered HfO2 films on germanium

Koji Kita, Masashi Sasagawa, Masahiro Toyama, Kentaro Kyuno, Akira Toriumi

研究成果: Conference article査読

抄録

HfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO 2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

本文言語English
ページ(範囲)169-174
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
811
DOI
出版ステータスPublished - 2004
外部発表はい
イベントIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States
継続期間: 2004 4 132004 4 16

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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