Reversible creation and annihilation of a local leakage path in HfO 2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

K. Yamamura, K. Kita, A. Toriumi, K. Kyuno

研究成果: Article査読

5 被引用数 (Scopus)

抄録

By direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in Hf O2 Ge Ox stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and annihilation of these paths are repeatable without noticeable degradation. The fact that these paths annihilate by a very small reverse bias suggests that this behavior is caused by local reduction and oxidation in the Hf O2 layer.

本文言語English
論文番号222101
ジャーナルApplied Physics Letters
89
22
DOI
出版ステータスPublished - 2006 12 7
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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