Role of point defects in dielectric breakdown of sio2formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

Keisuke Ishii, Daisuke Isshiki, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama

研究成果: Article査読

15 被引用数 (Scopus)

抄録

The intrinsic breakdown strength of thin SiO2films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane was measured using a self-healing technique by applying short-duration voltage pulses. Point defects in the films and other film qualities were examined by instrumental analyses and by optical absorption and luminescence using synchrotron radiation. The intrinsic breakdown strength decreases when the deposition temperature becomes higher than 400 °C, in spite of the fact that the optical gap and the density increase and the impurity content decreases. Based on the fact that the film deposited at high temperatures shows absorption at 7.6-eV and luminescence at 4.4-eV, the existence of oxygen vacancies(Si-Si) is suggested. The intrinsic breakdown strength is increased by decreasing oxygen vacancies through oxygen treatment. From these results, it is considered that oxygen vacancies play a crucial role in lowering the breakdown strength. Three possible mechanisms are discussed.

本文言語English
ページ(範囲)205-211
ページ数7
ジャーナルJapanese Journal of Applied Physics
34
1
DOI
出版ステータスPublished - 1995 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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