Room temperature terahertz emission via intracenter transition in semiconductors

Hikari Dezaki, Menglong Jing, Sundararajan Balasekaran, Tadao Tanabe, Yutaka Oyama

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb: Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.

本文言語English
ホスト出版物のタイトルAdvanced Materials in Microwaves and Optics, AMMO2011
出版社Trans Tech Publications Ltd
ページ66-69
ページ数4
ISBN(印刷版)9783037852736
DOI
出版ステータスPublished - 2012
外部発表はい
イベント2011 International Conference on Advanced Materials in Microwaves and Optics, AMMO2011 - Bangkok, Thailand
継続期間: 2011 9月 302011 10月 1

出版物シリーズ

名前Key Engineering Materials
500
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

Conference

Conference2011 International Conference on Advanced Materials in Microwaves and Optics, AMMO2011
国/地域Thailand
CityBangkok
Period11/9/3011/10/1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

フィンガープリント

「Room temperature terahertz emission via intracenter transition in semiconductors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル