Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

B. J. Zhang, T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno, T. Jimbo

研究成果: Article査読

31 被引用数 (Scopus)

抄録

GaN films were grown on sapphire and SiC substrates. The crystal qualities of GaN films were investigated by photoluminescence, atomic force microscopy, and electron-beam-induced current measurements, etc. It was found that the crystal quality of GaN on SiC is better than the one on sapphire. Ni/Au Schottky contacts were formed on the both samples. The electronic characteristics were obtained by current-voltage and capacitance-voltage measurements. Schottky diodes on sapphire substrate show breakdown voltage of -80 V. While for SiC substrate, the strong breakdown was not observed even at -100 V. The reverse leakage current of diodes based on SiC is over three orders of magnitude lower than that of sapphire substrate when the reverse voltage is above 50 V, which is due to the presence of low dislocation density and high thermal conductivity.

本文言語English
ページ(範囲)2567-2569
ページ数3
ジャーナルApplied Physics Letters
79
16
DOI
出版ステータスPublished - 2001 10 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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