Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

S. Tanaka, A. Furukawa, T. Baba, K. Ohta, M. Madihian, K. Honjo, A. Furukawa, T. Baba, K. Ohta

研究成果: Article

4 引用 (Scopus)

抜粋

An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.

元の言語English
ページ(範囲)872-873
ページ数2
ジャーナルElectronics Letters
24
発行部数14
DOI
出版物ステータスPublished - 1988 1 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M., Honjo, K., Furukawa, A., Baba, T., & Ohta, K. (1988). Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications. Electronics Letters, 24(14), 872-873. https://doi.org/10.1049/el:19880594