@article{4cce7b44bbff489d8ff395eb864cb63b,
title = "Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications",
abstract = "An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.",
keywords = "Bipolar devices, Integrated circuits, Semiconductor devices and materials, Transistors",
author = "S. Tanaka and A. Furukawa and T. Baba and K. Ohta and M. Madihian and K. Honjo and A. Furukawa and T. Baba and K. Ohta",
year = "1988",
month = jan,
day = "1",
doi = "10.1049/el:19880594",
language = "English",
volume = "24",
pages = "872--873",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "14",
}